(China (Mainland))
Product Summary
The R1LV0416CSB-5SI is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416CSB-5SI has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416CSB-5SI offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Parametrics
R1LV0416CSB-5SI absolute maximum ratings: (1)Power supply voltage relative to VSS VCC: −0.5 to +4.6 V; (2)Terminal voltage on any pin relative to VSS VT: −0.5 to VCC + 0.3 V; (3)Power dissipation PT: 0.7 W; (4)Operating temperature Topr: −40 to +85℃; (5)Storage temperature range Tstg: −65 to +150℃; (6)Storage temperature range under bias Tbias: −40 to +85 ℃; (7)Input leakage current: 1 μA.
Features
R1LV0416CSB-5SI features: (1)Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V; (2)Fast access time: 55/70 ns (max); (3)Power dissipation: Active: 5.0 mW/MHz (typ)(VCC = 2.5 V): 6.0 mW/MHz (typ)(VCC = 3.0 V),Standby: 1.25 μW (typ)(VCC = 2.5 V): 1.5 μW (typ)(VCC = 3.0 V); (4)Completely static memory, No clock or timing strobe required; (5)Equal access and cycle times; (6)Common data input and output, Three state output; (7)Battery backup operation. 2 chip selection for battery backup; (8)Temperature range: −40 to +85℃.
Diagrams
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 R1LV0108ESA-5SI#B0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SI#S0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SR#B0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-5SR#S0 |
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IC SRAM 8BIT 55NS 32STSOP |
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R1LV0108ESA-7SI#B0 |
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IC SRAM 8BIT 70NS 32STSOP |
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R1LV0108ESA-7SI#S0 |
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IC SRAM 8BIT 70NS 32STSOP |
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